Laser SiC Dicing/Cutting

Today, the laser is an indispensable tool in modern production technology. Its precision, speed and non-contact process enable innovative processing options for almost all materials. This also applies to particularly demanding materials such as Silicon Carbide (SiC) - a high-tech ceramic that impresses with its hardness and resistance. This is precisely where GIT’s research into laser processes comes in.

GIT shed light on how different laser sources - from nanosecond, pico- and femtosecond to waterjet-guided laser technology - have been used to raise the quality standards in structuring, cutting and drilling SiC ceramics to a new level. Our work focuses on improving the surface and cutting quality as well as optimizing the removal rate.

The Fully Automatic SiC Wafer Modification and Cutting Equipment GIT Designed uses multiple high-precision CCD vision cameras to automatically identify and locate 6-8” inch wafers with various die specifications. Combining custom ultrafast lasers with a precision motion platform for relative movement, it performs internal wafer modification (stealth dicing). A dedicated wafer splitter then completes full wafer dicing and die separation.
The system features a self-developed dynamic focus compensation module combined with a high-precision air-bearing linear motion platform, achieving industry-leading quality in high-precision, high-consistency wafer processing.
Equipped with a standard-design black-box enclosed optical path for stealth dicing, it ensures stable laser beam transmission and energy output, providing excellent processing stability.
With proprietary cutting and vision software, the system offers highly customizable functional modules to meet specific industry needs.

Product
Advantages

Certified by SEMI Semiconductor Industry Standards

Customizable vision and cutting software modules adaptable to various wafer types

Equipped with SEMI-standard automated wafer handling and inspection systems

Integrated with high-precision Dynamic Focus Compensation System (DFT) and Autofocus System

Achieves processing precision of ≤ ±1 microns, meeting advanced industry benchmarks.

Supports 6-8” inch wafers with dynamic focus compensation, autofocus, and auto-alignment to meet diverse processing needs.

Silicon carbide (SiC) is a semiconductor containing silicon and carbon. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.